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Electronic Components and Devices Flashcards

7 cards from real CET practice questions. Tap to flip, then mark Knew It or Still Learning โ€” missed cards come back until you master them.

Read the first 7 Electronic Components and Devices flashcards as text
  1. Which parameter of a MOSFET is analogous to the transconductance of a BJT?

    Answer: Transconductance (gm)

    Transconductance (gm) relates the change in drain current to the change in gate-source voltage in a MOSFET.

  2. A photodiode is operated in which mode for fastest response time?

    Answer: Reverse bias (photoconductive mode)

    Reverse bias (photoconductive mode) widens the depletion region, reducing junction capacitance and speeding up response.

  3. What causes thermal runaway in a bipolar junction transistor?

    Answer: Increased collector current raising junction temperature, further increasing current

    Rising temperature increases leakage current, which raises collector current, generating more heat in a destructive positive feedback loop.

  4. Which type of capacitor is NOT polarized and is commonly used in AC filtering applications?

    Answer: Film (polyester)

    Film capacitors are non-polarized and suitable for AC circuits, whereas electrolytic and tantalum types are polarized.

  5. In an enhancement-mode N-channel MOSFET, current flows when the gate-source voltage (VGS) is:

    Answer: Above threshold voltage

    An enhancement-mode N-channel MOSFET requires VGS to exceed the threshold voltage to create the conducting channel.

  6. What is the purpose of a bypass capacitor placed in parallel with the emitter resistor of a BJT amplifier?

    Answer: Bypass AC signal to increase AC gain

    A bypass capacitor short-circuits the emitter resistor at AC frequencies, eliminating the gain-reducing negative feedback.

  7. Which device is best described as a voltage-controlled variable resistor operating in its ohmic region?

    Answer: MOSFET in ohmic (linear) region

    A MOSFET biased in its ohmic (linear) region acts as a voltage-controlled resistor, with RDS controlled by VGS.